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1 111 silicon
кремній, орієнтований в кристалографічній площині 111English-Ukrainian dictionary of microelectronics > 111 silicon
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2 silicon
кремній, Si - bare silicon
- black silicon
- boron-implanted silicon
- bulk silicon
- capped silicon
- counterdoped silicon
- CVD silicon
- CZ silicon
- Czochralski silicon
- doped silicon
- electron-irradiated silicon
- epitaxial silicon
- floating-zone FZ silicon
- float-zone FZ silicon
- floating-zone silicon
- float-zone silicon
- germanium hardened silicon
- glow-discharge silicon
- high-resistivity silicon
- hydrogenated amorphous silicon
- implantation-amorphised silicon
- ion-implanted silicon
- microcrystalline silicon
- native silicon
- n+ diffused silicon
- neutron-doped silicon
- semiconductor-grade silicon
- silicided silicon
- single-crystal silicon
- zero-defect silicon
- 111 silicon
См. также в других словарях:
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Silicium — Eigenschaften … Deutsch Wikipedia
Шокли, Уильям Брэдфорд — Уильям Брэдфорд Шокли англ. William Bradford Shockley Шокли в 1975 году Дата рождения: 13 февраля 1 … Википедия
Thermische Oxidation von Silizium — Die thermische Oxidation von Silizium ist in der Halbleitertechnik ein Beschichtungsverfahren, bei dem auf einem einkristallinen Siliziumsubstrat (beispielsweise einem Silizium Wafer) eine dünne Schicht aus amorphen Siliziumdioxid aufgebracht… … Deutsch Wikipedia
